डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP260N | Power MOSFET PD - 95010A
IRFP260NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Fr |
International Rectifier |
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IRFP260N | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP260N,IIRFP260N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
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IRFP260NPBF | HEXFET Power MOSFET PD - 95010A
IRFP260NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Fr |
International Rectifier |
|
IRFP260NPBF | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·Ease of paralleling ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variation |
INCHANGE |
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