डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP150N | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
IRFP150N,IIRFP150N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
Inchange Semiconductor |
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IRFP150N | N-Channel Power MOSFET IRFP150N
Data Sheet January 2002
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-247
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Model |
Fairchild Semiconductor |
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IRFP150N | Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced p |
International Rectifier |
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IRFP150N | Power MOSFET IRFP150N
HEXFET Power MOSFET
FEATURES
z Avalanche Process Technology z Dynamic dv/dt Rating
z 175 Operating Temperature
z Fast Switching z Fully Avalanche Rated
Description
Fifth Generation HEXFETs from Artsch |
ARTS CHIP |
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IRFP150NPBF | Power MOSFET • Lead-Free
PD - 95002
IRFP150NPbF
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IRFP150N |
International Rectifier |
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