डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP140 | Power MOSFET Power MOSFET
IRFP140, SiHFP140
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
72 11 32 Single
0.077
D
TO-247AC
S
D G
G
S N-Channel M |
Vishay |
|
IRFP140 | N-channel Power MOSFET |
Fairchild Semiconductor |
|
IRFP140 | Power MOSFET |
International Rectifier |
|
IRFP140 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFP140
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤77mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L |
INCHANGE |
|
IRFP1405 | AUTOMOTIVE MOSFET PD - 95810
AUTOMOTIVE MOSFET
IRFP1405
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanch |
International Rectifier |
|
IRFP1405 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFP1405,IIRFP1405
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
|
IRFP1405PBF | Power MOSFET PD - 95509A
IRFP1405PbF
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |