डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFIZ48 | Power MOSFET |
International Rectifier |
|
IRFIZ48 | Power MOSFET |
International Rectifier |
|
IRFIZ48 | Power MOSFET |
International Rectifier |
|
IRFIZ48G | Power MOSFET |
International Rectifier |
|
IRFIZ48G | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFIZ48G
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum |
INCHANGE |
|
IRFIZ48G | Power MOSFET Power MOSFET
IRFIZ48G, SiHFIZ48G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
110 29 36 Single
0.018
D TO-220 FULLPAK
G
GDS
S N-Cha |
Vishay |
|
IRFIZ48N | Power MOSFET PD 9.1407
PRELIMINARY
IRFIZ48N
HEXFET® Power MOSFET
D
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
U
G |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |