IRFIBE30G डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor IRFIBE30G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-L

IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 3.0 78 9.6 45 Single TO-220 FULLPAK D G GDS S