डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFIBC40GLC | Power MOSFET www.vishay.com
IRFIBC40GLC, SiHFIBC40GLC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
1.2
39
10
19
Single
D
TO-220 |
Vishay |
|
IRFIBC40GLC | N-Channel MOSFET iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variati |
INCHANGE |
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IRFIBC40GLC | Power MOSFET |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |