डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFIBC30 | Power MOSFET |
International Rectifier |
|
IRFIBC30G | Power MOSFET |
International Rectifier |
|
IRFIBC30G | N-Channel MOSFET iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variatio |
INCHANGE |
|
IRFIBC30G | Power MOSFET IRFIBC30G, SiHFIBC30G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
2.2
31
4.6
17
Single
D TO-220 FULLPAK
G
GDS
S |
Vishay |
|
IRFIBC30GPBF | HEXFET Power MOSFET PD - 95611
IRFIBC30GPbF
•
Lead-Free
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IRF |
International Rectifier |
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