IRFIB7N50A डाटा शीट PDF( Datasheet )

PD - 91810 SMPS MOSFET IRFIB7N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS‡ Bene

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 TO-220 FULLPAK D G GDS S N-

iscN-Channel MOSFET Transistor IRFIB7N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.52Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lo

SMPS MOSFET PD - 94805 IRFIB7N50APbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free B