डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFD1Z2 | N-Channel MOSFET Semiconductor
July 1998
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
Features
• 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SO |
Harris Semiconductor |
|
IRFD1Z2 | FIELD EFFECT POWER TRANSISTOR ~D~·~~U
FIELD EFFECT POVVER TRANSISTOR
IRFD1Z2,1Z3
0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve l |
GE |
www.DataSheet.in | 2017 | संपर्क |