IRFBE30 डाटा शीट PDF( Datasheet )

www.vishay.com IRFBE30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 3.0 78 9.6

iscN-Channel MOSFET Transistor IRFBE30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 78 9.6 45 Single 3.0 I2PAK (TO-262

www.DataSheet4U.com PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET® Power MOSFE

isc N-Channel MOSFET Transistor IRFBE30PBF ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perf

• Lead-Free PD - 94945 IRFBE30PbF Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Do