IRFBC40L डाटा शीट PDF( Datasheet )

PD - 91016A IRFBC40S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRFBC40S) Low-profile through-hole (IRFBC40L) Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating 150°C Operating Temperature Fa

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Single 1.2 D I2PAK

iscN-Channel MOSFET Transistor IRFBC40L ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-L

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