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IRFBC40 | N-Channel Power MOSFET ®
IRFBC40
N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET
TYPE IRFBC40
s s s s s
V DSS 600 V
R DS(on) < 1.2 Ω
ID 6.2 A
TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVA |
STMicroelectronics |
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IRFBC40 | N-Channel Power MOSFET IRFBC40
Data Sheet July 1999 File Number
2157.3
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, t |
Intersil Corporation |
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IRFBC40 | Power MOSFET |
International Rectifier |
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IRFBC40 | N-Channel Power MOSFET IRFBC40
Data Sheet January 2002
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guara |
Fairchild Semiconductor |
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IRFBC40 | Power MOSFET www.vishay.com
IRFBC40
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
1.2
60
8.3 |
Vishay |
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IRFBC40 | N-Channel Power MOSFETs Semiconductor
IRFBC40, IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced pow |
Harris |
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IRFBC40 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBC40
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lo |
INCHANGE |
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