IRFBC30A डाटा शीट PDF( Datasheet )

PD- 91889A SMPS MOSFET IRFBC30A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l VDSS 600V Rds(on) max 2.2Ω ID 3.6A Benef

iscN-Channel MOSFET Transistor IRFBC30A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 23 5.4 11 Single D TO-220AB G S D G ORDERING

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 23 5.4 11 Single I2PAK (TO-262)

SMPS MOSFET PD - 95700 IRFBC30APbF HEXFET® Power MOSFET www.DataSheet4U.com Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free l VDSS 600V

PD- 91890B SMPS MOSFET IRFBC30AS/L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l VDSS 600V Rds(on) max 2.2 Ω ID 3.6A B

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 23 5.4 11 Single I2PAK (TO-262)