IRF9Z14S डाटा शीट PDF( Datasheet )

PD - 9.911A IRF9Z14S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z14S) l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Aval

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 60 VGS = - 10 V 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single 0.50 I2