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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF840LC | Power MOSFET www.vishay.com
IRF840LC
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
39 10 19 Sing |
Vishay |
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IRF840LC | Power MOSFET |
International Rectifier |
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IRF840LC | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF840LC
·FEATURES ·With low gate drive requirements ·Ultra low gate charge ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot |
INCHANGE |
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IRF840LCL | Power MOSFET PD- 93766
IRF840LCS IRF840LCL
HEXFET® Power MOSFET
l l l l l l
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetit |
International Rectifier |
|
IRF840LCL | Power MOSFET IRF840LCS/LCL
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drai |
TRANSYS |
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IRF840LCL | Power MOSFET IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
500 VGS = 10 V
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Single
0.85
I2P |
Vishay |
|
IRF840LCS | Power MOSFET PD- 93766
IRF840LCS IRF840LCL
HEXFET® Power MOSFET
l l l l l l
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetit |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |