IRF830 डाटा शीट PDF( Datasheet )

Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistan

® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALA

IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te

SEMICONDUCTORS IRF830 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in off-line switched mode power supplies, T.V. and computer monito