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IRF820 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF820
DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3Ω(Ma |
![]() Inchange Semiconductor |
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IRF820 | Power MOSFET |
![]() Motorola Inc |
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IRF820 | N-CHANNEL MOSFET ®
IRF820
N - CHANNEL 500V - 2.5 Ω - 2.5 A - TO-220 PowerMESH™ MOSFET
TYPE IRF820
s s s s s
V DSS 500 V
R DS(on) < 3Ω
ID 2.5 A
TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCH |
![]() STMicroelectronics |
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IRF820 | N-Channel Power MOSFET IRF820
Data Sheet July 1999 File Number
1581.4
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te |
![]() Intersil Corporation |
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IRF820 | Power MOSFET |
![]() International Rectifier |
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IRF820 | N-Channel Power MOSFET |
![]() Fairchild Semiconductor |
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IRF820 | N-Channel Power MOSFETs S E M I C O N D U C T O R
IRF820, IRF821, IRF822, IRF823
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect |
![]() Harris |
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