IRF720 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF720

IRF720 Data Sheet July 1999 File Number 1579.4 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te

www.vishay.com IRF720, SiHF720 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 V VGS = 10 V 20 3.3 11 Single D TO-220AB 1.8 S D G

PD- 91100D IRF7201 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S

www.DataSheet4U.com PD- 95022 IRF7201PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free