डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF630S | N-Channel Power MOSFET ®
IRF630S
N - CHANNEL 200V - 0.35Ω - 9A - D2PAK MESH OVERLAY ™ MOSFET
TYPE IRF630S
s s s s s s
V DSS 200 V
R DS(on) < 0.40 Ω
ID 9 A
TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% A |
STMicroelectronics |
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IRF630S | N-Channel MOSFET Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF630, IRF630S
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
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NXP |
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IRF630S | Power MOSFET Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
43 7.0 23 Single
0.40
D2PAK (TO-263) K
DS G
D
G S
N-Cha |
Vishay |
www.DataSheet.in | 2017 | संपर्क |