डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF630NS | Power MOSFET PD - 94005A
IRF630N IRF630NS IRF630NL
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements |
International Rectifier |
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IRF630NS | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
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IRF630NSPBF | Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description
Fifth Gener |
International Rectifier |
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IRF630NSTRRPBF | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF630NSTRRPBF
DESCRIPTION ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = |
INCHANGE |
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