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IRF630 | N-channel MOSFET IRF630
Datasheet
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package
TAB
TO-220
1 23
Features
Order code
VDS
IRF630
200 V
• Extremely high dv/dt capability • Very low |
STMicroelectronics |
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IRF630 | N-Channel Power MOSFET Data Sheet
IRF630, RF1S630SM
January 2002
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designe |
Fairchild Semiconductor |
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IRF630 | Power MOSFET www.vishay.com
IRF630
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
43 7.0 23 Singl |
Vishay |
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IRF630 | N-channel mosfet transistor MOSFET
IRF630
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source
Absolute Maximum |
Inchange Semiconductor |
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IRF630 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
IRF630
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
200V
RDS |
Advanced Power Electronics |
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IRF630A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 20 |
Fairchild Semiconductor |
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IRF630A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF630A
DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resis |
Inchange Semiconductor |
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