IRF540 डाटा शीट PDF( Datasheet )

www.vishay.com IRF540 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 72 11 32 Single

isc N-Channel Mosfet Transistor FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performan

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance

IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) IRF540 100 V <0.077 Ω s TYPICAL RDS(on) = 0.055Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVAL

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