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IRF510 डाटा शीट PDF( Datasheet )


डेटा पत्रक ( Datasheet PDF )

भाग संख्या विवरण मैन्युफैक्चरर्स PDF
IRF510   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
Inchange Semiconductor
Inchange Semiconductor
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IRF510   N-Channel Power MOSFET

Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guar
Fairchild Semiconductor
Fairchild Semiconductor
PDF
IRF510   Power MOSFET

www.vishay.com IRF510 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.3 2.3 3.8 Sin
Vishay
Vishay
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IRF510   Power MOSFET

International Rectifier
International Rectifier
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IRF510A   Advanced Power MOSFET

Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower
Fairchild Semiconductor
Fairchild Semiconductor
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IRF510F   Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
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IRF510G   Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
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