IRF450 डाटा शीट PDF( Datasheet )

ru~1m S[IG0iJSD©-OTO@H~[OL~M©uOSO@O~DN©~ IRF 450 - 451 IRF 452 - 453 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF450 IRF451 IRF452 IRF453 Voss 500 V 450 V 500 V 450 V Ros(on) 0.4 0 0.4 0

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF450 DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Li

IRF450 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (

IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF450 500V RDS(on) ID 0.400 12A PD- 90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-C