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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high effci |
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International Rectifier |
IRF3710S up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for lowprofile applications. ID = 57A S D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD |
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International Rectifier |
Power MOSFET O O O O O O O AUIRF3710Z AUIRF3710ZS HEXFET® Power MOSFET D Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS = 100V RD |
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International Rectifier |
IRF3710S in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications. D2Pak IRF3710S TO-262 IRF3710L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR d |
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nELL |
N-Channel Power MOSFET RDS(ON) = 0.023Ω @ VGS = 10V Ultra low gate charge(130nC max.) Low reverse transfer capacitance (CRSS = 72pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature G (Gate) S (Source |
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International Rectifier |
Power MOSFET W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications. D2Pak TO-262 IRF3710SPbF IRF3710LPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR d |
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International Rectifier |
HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing |
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International Rectifier |
Power MOSFET W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications. D2Pak TO-262 IRF3710SPbF IRF3710LPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR d |
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International Rectifier |
Power MOSFET O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax O Lead-Free, RoHS Compliant O Automotive Qualified * Description www.DataSheetS4pUe.ccoifmically designed for Automo |
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International Rectifier |
Power MOSFET C = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energ |
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International Rectifier |
Power MOSFET W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications. D2Pak TO-262 IRF3710SPbF IRF3710LPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR d |
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International Rectifier |
Power MOSFET O O O O O O O AUIRF3710Z AUIRF3710ZS HEXFET® Power MOSFET D Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS = 100V RD |
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International Rectifier |
HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing |
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International Rectifier |
HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing |
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International Rectifier |
HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤18mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide varie |
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INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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INCHANGE |
N-Channel MOSFET ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMU |
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INCHANGE |
N-Channel MOSFET ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMU |
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International Rectifier |
HEXFET Power MOSFET C = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energ |
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