डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF350 | N-Channel MOSFET IRF350
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO3 Type Package
D
Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling
G S
Abs |
NTE |
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IRF350 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF350
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at El |
Inchange Semiconductor |
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IRF350 | N-Channel Power MOSFET |
Samsung semiconductor |
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IRF350 | N-Channel Power MOSFET IRF350
Data Sheet March 1999 File Number 1826.3
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as |
Intersil Corporation |
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IRF350 | N-Channel Power MOSFET PD - 90339F
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A
IRF350 JANTX2N6768 JANTXV2N6768 [REF:M |
International Rectifier |
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IRF350 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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