IRF230 डाटा शीट PDF( Datasheet )

IRF230 TO–3 (TO–204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N–CHANNEL ENHANCEMENT MODE HIGH V

Semiconductor IRF230, IRF231, IRF232, IRF233 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF230 DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistan

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF230 200V RDS(on) 0.40 ID 9.0A PD- 90334G IRF230 JANTX2N6758 JANTXV2N6758 200V, N-CHA