IRF223 डाटा शीट PDF( Datasheet )

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF223 DESCRIPTION ·Drain Current ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistanc

Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Features • 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • S