डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF120 | N-CHANNEL POWER MOSFET |
Samsung semiconductor |
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IRF120 | Power MOSFET Semiconductor
IRF120, IRF121, IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transisto |
Intersil Corporation |
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IRF120 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF120 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF120
DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistanc |
Inchange Semiconductor |
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IRF1205 | HEXFET Power MOSFET PROVISIONAL
l Advanced Process Technology l Dynamic dv/dt Rating l 175 °C Operating Temprature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation MOSFETs from International Rectifier ut |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |