डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPW60R099CP | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R099CP IIPW60R099CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lo |
INCHANGE |
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IPW60R099CP | Power Transistor 9?E-'@'004?
4VVS=>AB= # : A 0<& <,9 =4=>: <
7LHZ[XLY V)DL: HI;> |
Infineon Technologies |
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IPW60R099CPA | Power Transistor CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (Ro |
Infineon |
www.DataSheet.in | 2017 | संपर्क |