डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP65R280E6 | Power Transistor GIM@?N
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Infineon Technologies |
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IPP65R280E6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPP65R280E6,IIPP65R280E6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |