डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP60R199CP | Power Transistor CoolMOS® Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target application |
Infineon Technologies |
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IPP60R199CP | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPP60R199CP,IIPP60R199CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |