डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP60R099CP | Power Transistor IPP60R099CP
CoolMOSTM Power Transistor
Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for tar |
Infineon Technologies |
|
IPP60R099CP | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPP60R099CP,IIPP60R099CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
|
IPP60R099CPA | Power Transistor IPP60R099CPA
CoolMOSTM Power Transistor
Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC
Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |