डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPP410N30N | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,300V IPP410N30N
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•N-channel |
Infineon Technologies |
|
IPP410N30N | N-Channel MOSFET isc N-Channel MOSFET Transistor
IPP410N30N,IIPP410N30N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤41mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lo |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |