डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPI65R280E6 | Power Transistor MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOS™ E6 Power Transistor IPx65R280E6
Data Sheet
Rev. 2.0, 2010-04-26 Final
www.DataSheet4U.net
In d u s tr ia l & M u l ti m a |
Infineon Technologies |
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IPI65R280E6 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |