डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD65R950C6 | MOSFET MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6650V
650VCoolMOS™C6PowerTransistor IPD65R950C6
DataSheet
Rev.2.0 Final
Industrial&Multimarket
650VCoolMOS™C6PowerTransi |
Infineon |
|
IPD65R950C6 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD65R950C6,IIPD65R950C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |