डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD65R600E6 | MOSFET MOSFET
Metall Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOSTM E6 Power Transistor IPx65R600E6
Data Sheet
Rev. 2.2, 2016-08-04
Power Management & Multimarket
650V CoolMOSTM E6 Power Transi |
Infineon Technologies |
|
IPD65R600E6 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |