डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD65R1K5CE | MOSFET IPD65R1K5CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonT |
Infineon |
|
IPD65R1K5CE | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.5Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |