डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R460CE | MOSFET IPD60R460CE,IPA60R460CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneered |
Infineon Technologies |
|
IPD60R460CE | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.46Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |