डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R2K1CE | MOSFET IPD60R2K1CE,IPU60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneered |
Infineon Technologies |
|
IPD60R2K1CE | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤2.1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |