डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPD60R280P7S | Power-Transistor IPD60R280P7S
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principl |
Infineon |
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IPD60R280P7S | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD60R280P7S,IIPD60R280P7S
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |