IPD50R399CP डाटा शीट PDF( Datasheet )

CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied

isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤399mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust