IPD50R280CE डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPD50R280CE | MOSFET IPD50R280CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonT |
 Infineon |
|
| IPD50R280CE | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |