IPD046N08N5 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IPD046N08N5 | MOSFET IPD046N08N5
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature |
 Infineon |
|
| IPD046N08N5 | N-Channel MOSFET isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
 INCHANGE |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |