डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB80N04S2-H4 | Power-Transistor OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche |
Infineon Technologies |
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IPB80N04S2-H4 | Power-Transistor | Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |