डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IPB60R299CP | Power Transistor IPB60R299CP
CoolMOSTM Power Transistor
Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for targ |
Infineon Technologies |
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IPB60R299CP | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IPB60R299CP
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
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IPB60R299CPA | Power Transistor IPB60R299CPA
CoolMOSTM Power Transistor
Product Summary V DS R DS(on),max Q g,typ 600 V
0.299 Ω 22 nC
Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |