IDW20G65C5 fiche technique

No.	Partie #	Fabricant	Description	Fiche Technique
1	IDW20G65C5	Infineon Technologies	SiC Schottky Barrier diodes  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Q
2	IDW20G65C5B	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Q