HGTP7N60C3 डाटा शीट PDF( Datasheet )

Data Sheet HGTD7N60C3S, HGTP7N60C3 December 2001 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bi

HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 File Number 4141.3 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features

HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 June 1996 14A, 600V, UFS Series N-Channel IGBT Features • 14A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 140

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT

HGTP7N60C3D, HGT1S7N60C3DS Data Sheet January 2000 File Number 4150.2 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switc

HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 14A, 600V at TC = 25oC • 600V Switching SOA Capab