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HFS4N90 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
HFS4N90

SemiHow
N-Channel MOSFET
‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 30 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(
Datasheet



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