डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
HFP4N65 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co., Ltd.
HFP4N65
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistor |
HUASHAN ELECTRONIC |
|
HFP4N65 | N-Channel MOSFET HFP4N65
April 2006
HFP4N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology |
SemiHow |
www.DataSheet.in | 2017 | संपर्क |